Enhanced vapour sensing using silicon nanowire devices coated with Pt nanoparticle functionalized porous organic frameworks.

Recently various porous organic frameworks (POFs, crystalline or amorphous materials) have been discovered, and used for a wide range of applications, including molecular separations and catalysis. Silicon nanowires (SiNWs) have been extensively studied for diverse applications, including as transistors, solar cells, lithium ion batteries and sensors. Here we demonstrate the functionalization of SiNW surfaces with POFs and explore its effect on the electrical sensing properties of SiNW-based devices. The surface modification by POFs was easily achieved by polycondensation on amine-modified SiNWs. Platinum nanoparticles were formed in these POFs by impregnation with chloroplatinic acid followed by chemical reduction. The final hybrid system showed highly enhanced sensitivity for methanol vapour detection. We envisage that the integration of SiNWs with POF selector layers, loaded with different metal nanoparticles will open up new avenues, not only in chemical and biosensing, but also in separations and catalysis.

Metal-Organic Polyhedra-Coated Si Nanowires for the Sensitive Detection of Trace Explosives.

Surface-modified silicon nanowire-based field-effect transistors (SiNW-FETs) have proven to be a promising platform for molecular recognition in miniature sensors. In this work, we present a novel nanoFET device for the sensitive and selective detection of explosives based on affinity layers of metal-organic polyhedra (MOPs). The judicious selection of the geometric and electronic characteristics of the assembly units (organic ligands and unsaturated metal site) embedded within the MOP cage allowed for the formation of multiple charge-transfer (CT) interactions to facilitate the selective explosive inclusion. Meanwhile, the host-stabilized CT complex inside the cage acted as an effective molecular gating element to strongly modulate the electrical conductance of the silicon nanowires. By grafting the MOP cages onto a SiNW-FET device, the resulting sensor showed a good electrical sensing capability to various explosives, especially 2,4,6-trinitrotoluene (TNT), with a detection limit below the nanomolar level. Importantly, coupling MOPs-which have tunable structures and properties-to SiNW-based devices may open up new avenues for a wide range of sensing applications, addressing various target analytes.

Up-scaling graphene electronics by reproducible metal-graphene contacts.

Chemical vapor deposition (CVD) of graphene on top of metallic foils is a technologically viable method of graphene production. Fabrication of microelectronic devices with CVD grown graphene is commonly done by using photolithography and deposition of metal contacts on top of the transferred graphene layer. This processing is potentially invasive for graphene, yields large spread in device parameters, and can inhibit up-scaling. Here we demonstrate an alternative process technology in which both lithography and contact deposition on top of graphene are prevented. First a prepatterned substrate is fabricated that contains all the device layouts, electrodes and interconnects. Then CVD graphene is transferred on top. Processing parameters are adjusted to yield a graphene layer that adopts the topography of the prepatterned substrate. The metal-graphene contact shows low contact resistances below 1 kΩ µm for CVD graphene devices. The conformal transfer technique is scaled-up to 150 mm wafers with statistically similar devices and with a device yield close to unity.

Ionophore-containing siloprene membranes: direct comparison between conventional ion-selective electrodes and silicon nanowire-based field-effect transistors.

Siloprene-based, ion-selective membranes (ISMs) were drop-casted onto a field-effect transistor device that consisted of a single-chip array of top-down prepared silicon nanowires (SiNWs). Within one array, two sets of SiNWs were covered with ISMs, each containing two different ionophores, allowing the simultaneous sensing of K and Na ions using a flow cell. It is shown that both ions can be effectively detected in the same solution over a wide concentration range from 10(-4) to 10(-1) M without interference. The ISMs were also analyzed in a conventional ISE configuration, allowing a direct comparison. While the responses for K(+) were similar for both sensor configurations, remarkably, the Na(+) response of the ISM-covered SiNW device was found to be higher than the one of the ISE configuration. The addition of a Na(+) buffering hydrogel layer between the SiO2 of the SiNW and the ISM reduced the response, showing the importance of keeping the boundary potential at the SiO2/ISM interface constant. The responses of the siloprene-covered SiNW devices were found to be stable over a period of at least 6 weeks, showing their potential as a multichannel sensor device.

Influence of conductivity and dielectric constant of water-dioxane mixtures on the electrical response of SiNW-based FETs.

In this study, we report on the electrical response of top-down, p-type silicon nanowire field-effect transistors exposed to water and mixtures of water and dioxane. First, the capacitive coupling of the back gate and the liquid gate via an Ag/AgCl electrode were compared in water. It was found that for liquid gating smaller potentials are needed to obtain similar responses of the nanowire compared to back gating. In the case of back gating, the applied potential couples through the buried oxide layer, indicating that the associated capacitance dominates all other capacitances involved during this mode of operation. Next, the devices were exposed to mixtures of water and dioxane to study the effect of these mixtures on the device characteristics, including the threshold voltage (V(T)). The V(T) dependency on the mixture composition was found to be related to the decreased dissociation of the surface silanol groups and the conductivity of the mixture used. This latter was confirmed by experiments with constant conductivity and varying water-dioxane mixtures.

Robust fabrication method for silicon nanowire field effect transistors for sensing applications.

This paper demonstrates a new method for the top-down production of silicon nanowire field effect transistors for sensing applications. A simple and robust method for the fabrication of these devices is described, using only conventional CMOS (Complementary Metal Oxide Semiconductor) processing techniques making it manufacturable on large scale in a broad range of production facilities. Moreover, the process is flexible in terms of the choice of the type of front oxide of the transistor, as it is applied in a separate, independent step from the application of the surrounding oxide. In case ultimate small dimensions are required that go beyond the wafer stepper resolution, the use of e-beam technology to produce even smaller structures can be easily integrated. Furthermore, the use of a passivation layer opens possibilities for adding selectivity via surface modification on silicon dioxide and silicon. After a detailed description of the process, the electrical characteristics of the devices are shown together with data on the device reliability, indicating that the process is easy to manufacture, has a large yield and results in sensor devices with electrical characteristics in the desired regime.